Relaxed SiGe Layers with High Ge Content by Compliant Substrates

An effective compliant substrate for low-dislocation relaxed Si1−xGex growth

An effective compliant substrate for Si1−xGex growth is presented. A silicon-on-insulator substrate was implanted with B and O forming 20 wt % borosilicate glass within the SiO2. The addition of the borosilicate glass to the buried oxide acted to reduce the viscosity at the growth temperature of Si1−xGex , promoting the in situ elastic deformation of the thin Si (∼ 20 nm) layer on the insulator...

Effective compliant substrate for low-dislocation relaxed SiGe growth

An effective compliant substrate was fabricated for the growth of high-quality relaxed SiGe templates, by synthesizing a 20% B2O3 concentration borosilicate glass ~BSG! in the silicon on insulator wafers. Substrates with 5%, 10%, and 20% B2O3 were used for 150 nm Si0.75Ge0.25 epitaxy. Double-axis x-ray diffraction measurements determined the relaxation and composition of the Si12xGex layers. Cr...

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained- Ge type-II heterostructures on relaxed SiGe substrates

Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantummechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/str...

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication

In this work, we have developed two different fabrication processes for relaxed Si1xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by “smart-cut” approach utilizing hydrogen implantation. Etch-back approach produces SGOI substrate with less defects in SiGe film, but the SiGe film uniformity is inferior. “Smart-cut” approach has better control on the SiGe...